검색결과 : 5건
| No. | Article |
|---|---|
| 1 |
Realizing high breakdown voltages (> 600 V) in partial SOI technology Tadikonda R, Hardikar S, Narayanan EMS Solid-State Electronics, 48(9), 1655, 2004 |
| 2 |
A segmented anode, npn controlled lateral insulated gate bipolar transistor Hardikar S, Xu YZ, De Souza MM, Narayanan EMS Solid-State Electronics, 45(7), 1055, 2001 |
| 3 |
A local charge control technique to improve the forward bias safe operating area of LIGBT Hardikar S, Cao G, Xu Y, De Souza MM, Narayanan EMS Solid-State Electronics, 44(7), 1213, 2000 |
| 4 |
Identification of an Estrogen Response Element Activated by Metabolites of 17-Beta-Estradiol and Raloxifene (Vol 273, Pg 1222, 1996) Yang NN, Venugopalan M, Hardikar S, Glasebrook A Science, 275(5304), 1249, 1997 |
| 5 |
Identification of an Estrogen Response Element Activated by Metabolites of 17-Beta-Estradiol and Raloxifene Yang NN, Venugopalan M, Hardikar S, Glasebrook A Science, 273(5279), 1222, 1996 |