검색결과 : 7건
| No. | Article |
|---|---|
| 1 |
High power lateral epitaxy MESFET technology in silicon carbide Konstantinov AO, Harris CI, Ray IC Materials Science Forum, 483, 853, 2005 |
| 2 |
Elimination of current instability and improvement of RF power performance usingSi(3)N(4) passivation in SiC lateral epitaxy MESFETs Cha HY, Choi YC, Konstantinov AO, Harris CI, Ericsson P, Eastman LF, Spencer MG Solid-State Electronics, 48(7), 1233, 2004 |
| 3 |
High-performance silicon carbide MESFET utilizing lateral epitaxy Konstantinov AO, Harris CI, Ericsson P Materials Science Forum, 389-3, 1375, 2002 |
| 4 |
MISiCFET chemical gas sensors for high temperature and corrosive environment applications Spetz AL, Uneus L, Svenningstorp H, Wingbrant H, Harris CI, Salomonsson P, Tengstrom P, Martensson P, Ljung P, Mattsson M, Visser JH, Ejakov SG, Kubinski D, Ekedahl LG, Lundstrom I, Savage SM Materials Science Forum, 389-3, 1415, 2002 |
| 5 |
Progress towards SiC products Harris CI, Savage S, Konstantinov A, Bakowski M, Ericsson P Applied Surface Science, 184(1-4), 393, 2001 |
| 6 |
High temperature 4H-SiC FET for gas sensing applications Savage SM, Konstantinov A, Saroukhan AM, Harris CI Materials Science Forum, 338-3, 1431, 2000 |
| 7 |
B implantation in 6H-SiC: Lattice damage recovery and implant activation upon high-temperature annealing Valcheva E, Paskova T, Ivanov IG, Yakimova R, Wahab Q, Savage S, Nordell N, Harris CI Journal of Vacuum Science & Technology B, 17(3), 1040, 1999 |