검색결과 : 9건
No. | Article |
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1 |
Growth of GaP and AlGaP on GaP(111) B using gas-source molecular-beam-epitaxy Barakat JB, Dadgostar S, Hestroffer K, Bierwagen O, Trampert A, Hatami F Journal of Crystal Growth, 477, 91, 2017 |
2 |
An energetic and kinetic investigation of the role of different atomic grain boundaries in healing radiation damage in nickel Arjhangmehr A, Feghhi SAH, Esfandiyarpour A, Hatami F Journal of Materials Science, 51(2), 1017, 2016 |
3 |
Thermal annealing effect on the structural properties of epitaxial growth of GaP on Si substrate Hussein EH, Dadgostar S, Hatami F, Masselink WT Journal of Crystal Growth, 419, 42, 2015 |
4 |
Structural properties of AlGaP films on GaP grown by gas-source molecular-beam epitaxy Dadgostar S, Hussein EH, Schmidtbauer J, Boeck T, Hatami F, Masselink WT Journal of Crystal Growth, 425, 94, 2015 |
5 |
Monolayer semiconductor nanocavity lasers with ultralow thresholds Wu SF, Buckley S, Schaibley JR, Feng LF, Yan JQ, Mandrus DG, Hatami F, Yao W, Vuckovic J, Majumdar A, Xu XD Nature, 520(7545), 69, 2015 |
6 |
Controlled growth of InP/In0.48Ga0.52P quantum dots on GaAs substrate Ugur A, Hatami F, Masselink WT Journal of Crystal Growth, 323(1), 228, 2011 |
7 |
Distribution of Mn in ferromagnetic (In,Mn)Sb films grown on (001) GaAs using MBE Tran L, Hatami F, Masselink WT, Herfort J, Trampert A Journal of Crystal Growth, 323(1), 340, 2011 |
8 |
A comparison of the low frequency noise in InSb grown on GaAs and Si by MBE Dobbert J, Tran L, Hatami F, Kunets VP, Salamo GJ, Masselink WT Journal of Crystal Growth, 323(1), 393, 2011 |
9 |
Planar ordering of InP quantum dots on (100)In0.48Ga0.52P Hatami F, Muller U, Kissel H, Braune K, Blum RP, Rogaschewski S, Niehus H, Kirmse H, Neumann W, Schmidbauer M, Kohler R, Masselink WT Journal of Crystal Growth, 216(1-4), 26, 2000 |