화학공학소재연구정보센터
검색결과 : 9건
No. Article
1 Growth of GaP and AlGaP on GaP(111) B using gas-source molecular-beam-epitaxy
Barakat JB, Dadgostar S, Hestroffer K, Bierwagen O, Trampert A, Hatami F
Journal of Crystal Growth, 477, 91, 2017
2 An energetic and kinetic investigation of the role of different atomic grain boundaries in healing radiation damage in nickel
Arjhangmehr A, Feghhi SAH, Esfandiyarpour A, Hatami F
Journal of Materials Science, 51(2), 1017, 2016
3 Thermal annealing effect on the structural properties of epitaxial growth of GaP on Si substrate
Hussein EH, Dadgostar S, Hatami F, Masselink WT
Journal of Crystal Growth, 419, 42, 2015
4 Structural properties of AlGaP films on GaP grown by gas-source molecular-beam epitaxy
Dadgostar S, Hussein EH, Schmidtbauer J, Boeck T, Hatami F, Masselink WT
Journal of Crystal Growth, 425, 94, 2015
5 Monolayer semiconductor nanocavity lasers with ultralow thresholds
Wu SF, Buckley S, Schaibley JR, Feng LF, Yan JQ, Mandrus DG, Hatami F, Yao W, Vuckovic J, Majumdar A, Xu XD
Nature, 520(7545), 69, 2015
6 Controlled growth of InP/In0.48Ga0.52P quantum dots on GaAs substrate
Ugur A, Hatami F, Masselink WT
Journal of Crystal Growth, 323(1), 228, 2011
7 Distribution of Mn in ferromagnetic (In,Mn)Sb films grown on (001) GaAs using MBE
Tran L, Hatami F, Masselink WT, Herfort J, Trampert A
Journal of Crystal Growth, 323(1), 340, 2011
8 A comparison of the low frequency noise in InSb grown on GaAs and Si by MBE
Dobbert J, Tran L, Hatami F, Kunets VP, Salamo GJ, Masselink WT
Journal of Crystal Growth, 323(1), 393, 2011
9 Planar ordering of InP quantum dots on (100)In0.48Ga0.52P
Hatami F, Muller U, Kissel H, Braune K, Blum RP, Rogaschewski S, Niehus H, Kirmse H, Neumann W, Schmidbauer M, Kohler R, Masselink WT
Journal of Crystal Growth, 216(1-4), 26, 2000