검색결과 : 3건
| No. | Article |
|---|---|
| 1 |
Proton and gamma radiation effects in a new first-generation SiGeHBT technology Haugerud BM, Pratapgarhwala MM, Comeau JP, Sutton AK, Prakash APG, Cressler JD, Marshall PW, Marshall CJ, Ladbury RL, El-Diwany M, Mitchell C, Rockett L, Bach T, Lawrence R, Haddad N Solid-State Electronics, 50(2), 181, 2006 |
| 2 |
An investigation of the effects of radiation exposure on stability constraints in epitaxial SiGe strained layers Chen TB, Sutton AK, Haugerud BM, Henderson W, Prakash APG, Cressler JD, Doolittle A, Liu XF, Joseph A, Marshall PW Solid-State Electronics, 50(7-8), 1194, 2006 |
| 3 |
The effects of mechanical planar biaxial strain in Si/SiGe HBT BiCMOS technology Haugerud BM, Nayeern MB, Krithivasan R, Lu Y, Zhu CD, Cressler JD, Belford RE, Joseph AJ Solid-State Electronics, 49(6), 986, 2005 |