검색결과 : 12건
| No. | Article |
|---|---|
| 1 |
Sb-Doped SnO2 Aerogels Based Catalysts for Proton Exchange Membrane Fuel Cells: Pt Deposition Routes, Electrocatalytic Activity and Durability Ozouf G, Cognard G, Maillard F, Chatenet M, Guetaz L, Heitzmann M, Jacques PA, Beauger C Journal of the Electrochemical Society, 165(6), F3036, 2018 |
| 2 |
Solid-liquid equilibria in the ternary system NaBO2-NaOH-H2O thermal behavior of double salts Vilarinho-Franco T, Teyssier A, Tenu R, Pecaut J, Delmas J, Heitzmann M, Capron P, Counioux JJ, Goutaudier C Fluid Phase Equilibria, 360, 212, 2013 |
| 3 |
Comparison of Two Tetrapodal N,O Ligands: Impact of the Softness of the Heterocyclic N-Donors Pyridine and Pyrazine on the Selectivity for Am(III) over Eu(III) Heitzmann M, Bravard F, Gateau C, Boubals N, Berthon C, Pecaut J, Charbonnel MC, Delangle P Inorganic Chemistry, 48(1), 246, 2009 |
| 4 |
Complexation of poly (pyrrole-EDTA like) film modified electrodes: Application to metal cations electroanalysis Heitzmann M, Bucher C, Moutet JC, Pereira E, Rivas BL, Royal G, Saint-Aman E Electrochimica Acta, 52(9), 3082, 2007 |
| 5 |
Characterization of metal cations-complexing polymer films interactions followed with anodic stripping voltammetry Heitzmann M, Bucher C, Moutet JC, Pereira E, Rivas BL, Royal G, Saint-Aman E Journal of Electroanalytical Chemistry, 610(2), 147, 2007 |
| 6 |
A 0.10 mu m buried p-channel MOSFET with through the gate boron implantation and arsenic tilted pocket Guegan G, Deleonibus S, Caillat C, Tedesco S, Dal'zotto B, Heitzmann M, Nier ME, Mur P Solid-State Electronics, 46(3), 343, 2002 |
| 7 |
A 20 nm physical gate length NMOSFET with a 1.2 nm gate oxide fabricated by mixed dry and wet hard mask etching Caillat C, Deleonibus S, Guegan G, Heitzmann M, Nier ME, Tedesco S, Dal'zotto B, Martin F, Mur P, Papon AM, Lecarval G, Previtali B, Toffoli A, Allain F, Biswas S, Jourdan F, Fugier P, Dichiaro JL Solid-State Electronics, 46(3), 349, 2002 |
| 8 |
Interplay of intrinsic and environmental effects on the magnetic properties of free radicals issuing from H-atom addition to cytosine Adamo C, Heitzmann M, Meilleur F, Rega N, Scalmani G, Grand A, Cadet J, Barone V Journal of the American Chemical Society, 123(29), 7113, 2001 |
| 9 |
X-ray photoelectron spectroscopy analyses of metal stacks etched in Cl-2/BCl3 high density plasmas Czuprynski P, Joubert O, Vallier L, Puttock M, Heitzmann M Journal of Vacuum Science & Technology B, 16(1), 147, 1998 |
| 10 |
Elimination of Stress-Induced Defects in Polybuffered Locos Isolation Scheme for Sub-0.25-Mu-M Designs Deleonibus S, Martin F, Heitzmann M, Guibert JC, Papon AM Journal of the Electrochemical Society, 144(6), L164, 1997 |