검색결과 : 7건
| No. | Article |
|---|---|
| 1 |
A charge sheet model for MOSFETs with an abrupt retrograde channel -Part I. Drain current and body charge Persson S, Hellberg PE, Zhang SL Solid-State Electronics, 46(12), 2209, 2002 |
| 2 |
A charge sheet model for MOSFETs with an abrupt retrograde channel -Part II. Charges and intrinsic capacitances Persson S, Hellberg PE, Zhang SL Solid-State Electronics, 46(12), 2217, 2002 |
| 3 |
Threshold voltage control for PMOSFETs using an undoped epitaxial Si channel and a p(+)-SixGe1-x gate Hellberg PE, Zhang SL, Radamsson HH, Kaplan W Solid-State Electronics, 44(11), 2085, 2000 |
| 4 |
Boron in polycrystalline SixGe1-x films Mangelinck D, Hellberg PE, Zhang SL, d'Heurle FM Journal of the Electrochemical Society, 145(7), 2530, 1998 |
| 5 |
Boron in polycrystalline SixGe1-x films. Phase diagram and solid solubility (vol 145, pg 2530, 1998) Mangelinck D, Hellberg PE, Zhang SL, d'Heurle FM Journal of the Electrochemical Society, 145(11), 4043, 1998 |
| 6 |
Boron-Doped Polycrystalline Sixge1-X Films - Dopant Activation and Solid Solubility Hellberg PE, Gagnor A, Zhang SL, Petersson CS Journal of the Electrochemical Society, 144(11), 3968, 1997 |
| 7 |
Tantalum Oxide-Films on Silicon Grown by Tantalum Evaporation in Atomic Oxygen Hudner J, Hellberg PE, Kusche D, Ohlsen H Thin Solid Films, 281-282, 415, 1996 |