검색결과 : 2건
No. | Article |
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1 |
Direct observation of 0.57 eV trap-related RF output power reduction in AlGaN/GaN high electron mobility transistors Arehart AR, Sasikumar A, Rajan S, Via GD, Poling B, Winningham B, Heller ER, Brown D, Pei Y, Recht F, Mishra UK, Ringel SA Solid-State Electronics, 80, 19, 2013 |
2 |
Effect of tensile strain on B-type step energy on Si(001)-(2x1) surfaces determined by switch-kink counting Heller ER, Jones DE, Pelz JP, Xie YH, Silverman PJ Journal of Vacuum Science & Technology A, 17(4), 1663, 1999 |