화학공학소재연구정보센터
검색결과 : 2건
No. Article
1 Direct observation of 0.57 eV trap-related RF output power reduction in AlGaN/GaN high electron mobility transistors
Arehart AR, Sasikumar A, Rajan S, Via GD, Poling B, Winningham B, Heller ER, Brown D, Pei Y, Recht F, Mishra UK, Ringel SA
Solid-State Electronics, 80, 19, 2013
2 Effect of tensile strain on B-type step energy on Si(001)-(2x1) surfaces determined by switch-kink counting
Heller ER, Jones DE, Pelz JP, Xie YH, Silverman PJ
Journal of Vacuum Science & Technology A, 17(4), 1663, 1999