검색결과 : 9건
| No. | Article |
|---|---|
| 1 |
Properties of GaN layers grown on N-face free-standing GaN substrates Li X, Hemmingsson C, Forsberg U, Janzen E, Pozina G Journal of Crystal Growth, 413, 81, 2015 |
| 2 |
Optimization of low temperature GaN buffer layers for halide vapor phase epitaxy growth of bulk GaN Hemmingsson C, Pozina G Journal of Crystal Growth, 366, 61, 2013 |
| 3 |
Growth and characterization of thick GaN layers grown by halide vapour phase epitaxy on lattice-matched AlInN templates Hemmingsson C, Boota M, Rahmatalla RO, Junaid M, Pozina G, Birch J, Monemar B Journal of Crystal Growth, 311(2), 292, 2009 |
| 4 |
Modeling, optimization, and growth of GaN in a vertical halide vapor-phase epitaxy bulk reactor Hemmingsson C, Pozina G, Heuken M, Schineller B, Monemar B Journal of Crystal Growth, 310(5), 906, 2008 |
| 5 |
Hydride vapour phase epitaxy growth and characterization of thick GaN using a vertical HVPE reactor Hemmingsson C, Paskov PP, Pozina G, Heuken M, Schineller B, Monemar B Journal of Crystal Growth, 300(1), 32, 2007 |
| 6 |
Growth of thick GaN layers with hydride vapour phase epitaxy Monemar B, Larsson H, Hemmingsson C, Ivanov IG, Gogova D Journal of Crystal Growth, 281(1), 17, 2005 |
| 7 |
Fast SiC epitaxial growth in a chimney CVD reactor and HTCVD crystal growth developments Ellison A, Zhang J, Magnusson W, Henry A, Wahab Q, Bergman JP, Hemmingsson C, Son NT, Janzen E Materials Science Forum, 338-3, 131, 2000 |
| 8 |
Time-resolved photoluminescence study of bound and free excitons in 4H SiC Pozina G, Bergman JP, Hemmingsson C, Janzen E Materials Science Forum, 338-3, 675, 2000 |
| 9 |
Electroluminescence from implanted and epitaxially grown pn-diodes Carlsson FHC, Storasta L, Hemmingsson C, Bergman JP, Janzen E Materials Science Forum, 338-3, 687, 2000 |