검색결과 : 7건
| No. | Article |
|---|---|
| 1 |
The low-energy Goldstone mode in a trapped dipolar supersolid Guo M, Bottcher F, Hertkorn J, Schmidt JN, Wenzel M, Buchler HP, Langen T, Pfau T Nature, 574(7778), 386, 2019 |
| 2 |
Morphology, growth mode and indium incorporation of MOVPE grown InGaN and AlInGaN: A comparison Ahl JP, Hertkorn J, Koch H, Galler B, Michel B, Binder M, Hollander B Journal of Crystal Growth, 398, 33, 2014 |
| 3 |
High quality AlGaN epilayers grown on sapphire using SiNx interlayers Forghani K, Klein M, Lipski F, Schwaiger S, Hertkorn J, Leute RAR, Scholz F, Feneberg M, Neuschl B, Thonke K, Klein O, Kaiser U, Gutt R, Passow T Journal of Crystal Growth, 315(1), 216, 2011 |
| 4 |
Process optimization for the effective reduction of threading dislocations in MOVPE grown GaN using in situ deposited SiNx masks Hertkorn J, Lipski F, Bruckner R, Wunderer T, Thapa SB, Scholz F, Chuvilin A, Kaiser U, Beer M, Zweck J Journal of Crystal Growth, 310(23), 4867, 2008 |
| 5 |
Growth and studies of Si-doped AlN layers Thapa SB, Hertkorn J, Scholz F, Prinz GM, Leute RAR, Feneberg M, Thonke K, Sauer R, Klein O, Biskupek J, Kaiser U Journal of Crystal Growth, 310(23), 4939, 2008 |
| 6 |
MOVPE growth of GaN around ZnO nanopillars Thapa SB, Hertkorn J, Wunderer T, Lipski F, Scholz F, Reiser A, Xie Y, Feneberg M, Thonke K, Sauer R, Durrschnabel M, Yao LD, Gerthsen D, Hochmuth H, Lorenz M, Grundmann M Journal of Crystal Growth, 310(23), 5139, 2008 |
| 7 |
Optimization of nucleation and buffer layer growth for improved GaN quality Hertkorn J, Brueckner P, Thapa SB, Wunderer T, Scholz F, Feneberg M, Thonke K Journal of Crystal Growth, 308(1), 30, 2007 |