1 |
Efficient light output power for InGaP/GaAs heterojunction bipolar transistors incorporated with InGaAs quantum wells Huang TH, Wu MC Solid-State Electronics, 121, 12, 2016 |
2 |
An efficient heat-spreader design: First demonstration on InGaP/graded InGaAs base/GaAs collector-up HBTs Tseng HC, Chu WJ Solid-State Electronics, 79, 290, 2013 |
3 |
Design of emitter ledge for thermal stability of AlGaAs/GaAs heterojunction bipolar transistors Lim HW, Baek CH, Kang BK Solid-State Electronics, 81, 5, 2013 |
4 |
Early effect of SiGe heterojunction bipolar transistors Xu XB, Zhang HM, Hu HY, Qu JT Solid-State Electronics, 72, 1, 2012 |
5 |
A highly-compact packaging design for improving the thermal performance of multi-finger InGaP/GaAs collector-up HBTs Tseng HC, Chen JY Solid-State Electronics, 56(1), 85, 2011 |
6 |
Double-polysilicon SiGe HBT architecture with lateral base link Fox A, Heinemann B, Rucker H Solid-State Electronics, 60(1), 93, 2011 |
7 |
A selective epitaxy collector module for high-speed Si/SiGe:C HBTs Geynet B, Chevalier P, Brossard F, Vandelle B, Schwartzmann T, Buczko M, Avenier G, Dutartre D, Dambrine G, Danneville F, Chantre A Solid-State Electronics, 53(8), 873, 2009 |
8 |
Characterization of silicon-germanium heterojunction bipolar transistors degradation in silicon-germanium BiCMOS technologies Lee SY, Park CW Solid-State Electronics, 50(3), 333, 2006 |
9 |
Temperature dependence of electron saturation velocity in GaAs measured in InGaP/GaAs HBT using DC and AC approaches Hsin YM, Tang WB, Hsu HT Solid-State Electronics, 49(3), 295, 2005 |
10 |
A unified analytical model for charge transport in Heterojunction Bipolar Transistors Reddy KV, DasGupta A Solid-State Electronics, 48(9), 1613, 2004 |