검색결과 : 8건
| No. | Article |
|---|---|
| 1 |
Properties of InGaAs/GaAs metal-oxide-semiconductor heterostructure field-effect transistors modified by surface treatment Gregusova D, Gucmann F, Kudela R, Micusik M, Stoklas R, Valik L, Gregus J, Blaho M, Kordos P Applied Surface Science, 395, 140, 2017 |
| 2 |
AlGaN/GaN heterostructure field-effect transistors with multi-MgxNy/GaN buffer and Photo-CVD SiO2 gate dielectric Lee KH, Chang PC, Chang SJ, Su YK Solid-State Electronics, 72, 38, 2012 |
| 3 |
Physical and electrical characteristics of hafnium oxide films on AlGaN/GaN heterostructure grown by pulsed laser deposition Tian F, Chor EF Thin Solid Films, 518(24), E121, 2010 |
| 4 |
Determination of the average channel temperature of GaN MOSHFETs under continuous wave and periodic-pulsed RF operational conditions Deng YQ, Islam MDM, Gaevski M, Yang ZJ, Adivarahan V, Khan A Solid-State Electronics, 52(7), 1106, 2008 |
| 5 |
GaN-based FETs using Cat-CVD SiN passivation for millimeter-wave applications Higashiwaki M, Mimura T, Matsui T Thin Solid Films, 516(5), 548, 2008 |
| 6 |
High temperature performance of AlGaN/GaN HEMTs on Si substrates Tan WS, Uren MJ, Fry PW, Houston PA, Balmer RS, Martin T Solid-State Electronics, 50(3), 511, 2006 |
| 7 |
A comparison of commercial sources of epitaxial material for GaN HFETs fabrication Wallis RH, Davies RA, Jones SK, Beanland R, Phillips WA Journal of Crystal Growth, 230(3-4), 569, 2001 |
| 8 |
Material optimisation for AlGaN/GaN HFET applications Bougrioua Z, Moerman I, Sharma N, Wallis RH, Cheyns J, Jacobs K, Thrush EJ, Considine L, Beanland R, Farvacque JL, Humphreys C Journal of Crystal Growth, 230(3-4), 573, 2001 |