검색결과 : 47건
| No. | Article |
|---|---|
| 1 |
Effect of reactant gas stoichiometry of in-situ SiNx passivation on structural properties of MOCVD AlGaN/GaN HEMTs Siddique A, Ahmed R, Anderson J, Piner EL Journal of Crystal Growth, 517, 28, 2019 |
| 2 |
Ohmic contact to AlGaN/GaN HEMT with electrodes in contact with heterostructure interface Chen DB, Wan LJ, Li J, Liu ZK, Li GQ Solid-State Electronics, 151, 60, 2019 |
| 3 |
Device behaviour and zero temperature coefficients analysis for microwave GaAs HEMT Alim MA, Rezazadeh AA Solid-State Electronics, 147, 13, 2018 |
| 4 |
Mechanism of leakage of ion-implantation isolated AlGaN/GaN MIS-high electron mobility transistors on Si substrate Zhang ZL, Song L, Li WY, Fu K, Yu GH, Zhang XD, Fan YM, Deng XG, Li SM, Sun SC, Li XJ, Yuan J, Sun Q, Dong ZH, Cai Y, Zhang BS Solid-State Electronics, 134, 39, 2017 |
| 5 |
The causes of GaN HEMT bell-shaped transconductance degradation Chen CH, Sadler R, Wang DV, Hou D, Yang YF, Yau W, Sutton W, Shim J, Wang SG, Duong A Solid-State Electronics, 126, 115, 2016 |
| 6 |
Low temperature AIN growth by MBE and its application in HEMTs Faria FA, Nomoto K, Hu ZY, Rouvimov S, Xing HL, Jena D Journal of Crystal Growth, 425, 133, 2015 |
| 7 |
Influence of a parallel electric field on the dispersion relation of graphene - A new route to Dirac logics Krukowski S, Soltys J, Borysiuk J, Piechota J Journal of Crystal Growth, 401, 869, 2014 |
| 8 |
A novel method for measuring parasitic resistance in high electron mobility transistors Yang Z, Wang JY, Li XP, Zhang B, Zhao J, Xu Z, Wang MJ, Yu M, Yang ZC, Wu WG, Zhang YM, Zhang JC, Ma XH, Hao Y Solid-State Electronics, 100, 27, 2014 |
| 9 |
Nano-scale surface morphology optimization of the ohmic contacts and electrical properties of AlGaN/GaN high electron mobility transistors using a rapid thermal annealing dielectric protection layer Cho SJ, Wang C, Kim NY Thin Solid Films, 557, 262, 2014 |
| 10 |
True planar InAs/AlSb HEMTs with ion-implantation technique for low-power cryogenic applications Moschetti G, Abbasi M, Nilsson PA, Hallen A, Desplanque L, Wallart X, Grahn J Solid-State Electronics, 79, 268, 2013 |