화학공학소재연구정보센터
검색결과 : 3건
No. Article
1 High resolution Rutherford Backscattering Spectrometry investigations of ZrO2 layer growth in the initial stage on native silicon oxide and titanium nitride
Vieluf M, Munnik F, Neelmeijer C, Kosmata M, Teichert S
Thin Solid Films, 520(18), 5900, 2012
2 Exit angle dependence of charge-state distribution of backscattered He ions
Sasakawa K, Nakajima K, Suzuki M, Kimura K
Applied Surface Science, 256(4), 965, 2009
3 Compositional transition layer in SiO2/Si interface observed by high-resolution RBS
Kimura K, Nakajima K
Applied Surface Science, 216(1-4), 283, 2003