1 |
Highly frequency-, temperature-, and bias -stable dielectric properties of 500 degrees C processed Bi2SiO5 thin films with low dielectric loss Ke YF, Huang WH, Thatikonda SK, Chen RQ, Yao CY, Qin N, Bao DH Current Applied Physics, 20(6), 751, 2020 |
2 |
Overcoating BaTiO3 dielectrics with a fluorinated polymer to produce highly reliable organic field-effect transistors Jeong YJ, Kim DH, Kang YM, An TEY Thin Solid Films, 685, 40, 2019 |
3 |
Atomic layer-deposited (HfZrO4)(1-x)(SiO2)(x) thin films for gate stack applications Choi P, Baek D, Heo S, Choi B Thin Solid Films, 652, 2, 2018 |
4 |
WO3-doped LiF as gate dielectric for p-channel vertical organic field effect transistor application Verma R, Suman CK, Srivastava R Thin Solid Films, 666, 156, 2018 |
5 |
SrTa2O6 induced low voltage operation of InGaZnO thin-film transistors Takahashi T, Hoga T, Miyanaga R, Fujii MN, Ishikawa Y, Uraoka Y, Uchiyama K Thin Solid Films, 665, 173, 2018 |
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Investigation of low operation voltage InZnSnO thin-film transistors with different high-k gate dielectric by physical vapor deposition Ruan DB, Liu PT, Chiu YC, Kan KZ, Yu MC, Chien TC, Chen YH, Kuo PY, Sze SM Thin Solid Films, 660, 885, 2018 |
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Controllable reduction of graphene oxide and its application during the fabrication of high dielectric constant composites Liu H, Xu P, Yao HB, Chen WH, Zhao JY, Kang CQ, Bian Z, Gao LX, Guo HQ Applied Surface Science, 420, 390, 2017 |
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Impact of Cu2O doping on high dielectric properties of CuO ceramics Wang DD, Zhou FZ, Cao JX, Li LB, Li GL Current Applied Physics, 17(5), 781, 2017 |
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Development of high dielectric dual phase [Bi4Ti3O12](X)-[CaCu3Ti4O12](1) (-) (X) nanocomposite thin films for modern microelectronic device applications Pandirengan T, Arumugam M, Durairaj M Thin Solid Films, 628, 117, 2017 |
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Optimizing HiPIMS pressure for deposition of high-k (k=18.3) amorphous HfO2 Ganesan R, Murdoch BJ, Partridge JG, Bathgate S, Treverrow B, Dong X, Ross AE, McCulloch DG, McKenzie DR, Bilek MMM Applied Surface Science, 365, 336, 2016 |