검색결과 : 6건
| No. | Article |
|---|---|
| 1 |
A compact drain current model for heterostructure HEMTs including 2DEG density solution with two subbands Deng WL, Huang JK, Ma XY, Liou JJ, Yu F Solid-State Electronics, 115, 54, 2016 |
| 2 |
A compact model of the reverse gate-leakage current in GaN-based HEMTs Ma XY, Huang JK, Fang JL, Deng WL Solid-State Electronics, 126, 10, 2016 |
| 3 |
Multibias and thermal behavior of microwave GaN and GaAs based HEMTs Alim MA, Rezazadeh AA, Gaquiere C Solid-State Electronics, 126, 67, 2016 |
| 4 |
Direct observation of 0.57 eV trap-related RF output power reduction in AlGaN/GaN high electron mobility transistors Arehart AR, Sasikumar A, Rajan S, Via GD, Poling B, Winningham B, Heller ER, Brown D, Pei Y, Recht F, Mishra UK, Ringel SA Solid-State Electronics, 80, 19, 2013 |
| 5 |
Design of AlGaN/GaN HEMTs employing mesa field plate for breakdown voltage enhancement Cho KH, Kim YS, Lim J, Choi YH, Han MK Solid-State Electronics, 54(4), 405, 2010 |
| 6 |
Development of Time-resolved UV Micro-Raman Spectroscopy to measure temperature in AlGaN/GaN HEMTs Lancry O, Pichonat E, Rehault J, Moreau M, Aubry R, Gaquiere C Solid-State Electronics, 54(11), 1434, 2010 |