검색결과 : 32건
| No. | Article |
|---|---|
| 1 |
A 2-D semi-analytical model of parasitic capacitances for MOSFETs with high k gate dielectric in short channel Wang M, Ke DM, Xu CX, Wang BT Solid-State Electronics, 92, 35, 2014 |
| 2 |
Epitaxial growth and electrical properties of ultrathin La2Hf2O7 high-k gate dielectric films Xiong YH, Tu HL, Du J, Wei F, Zhang XQ, Yang MM, Zhao HB, Chen DP, Wang WW Applied Surface Science, 283, 554, 2013 |
| 3 |
Charge trapping induced frequency-dependence degradation in n-MOSFETs with high-k/metal gate stacks Dai CH, Chang TC, Chu AK, Kuo YJ, Hung YC, Lo WH, Ho SH, Chen CE, Shih JM, Chung WL, Chen HM, Dai BS, Tsai TM, Xia GR, Cheng O, Huang CT Thin Solid Films, 520(5), 1511, 2011 |
| 4 |
Fabrication and characterization of La-doped HfO2 gate dielectrics by metal-organic chemical vapor deposition Huang LY, Li AD, Zhang WQ, Li H, Xia YD, Wu D Applied Surface Science, 256(8), 2496, 2010 |
| 5 |
Interface and electrical properties of La-silicate for direct contact of high-k with silicon Kakushima K, Tachi K, Adachi M, Okamoto K, Sato S, Song J, Kawanago T, Ahmet P, Tsutsui K, Sugii N, Hattori T, Iwai H Solid-State Electronics, 54(7), 715, 2010 |
| 6 |
Characterization of flatband voltage roll-off and roll-up behavior in La2O3/silicate gate dielectric Kakushima K, Koyanagi T, Tachi K, Song J, Ahmet P, Tsutsui K, Sugii N, Hattori T, Iwai H Solid-State Electronics, 54(7), 720, 2010 |
| 7 |
Electrical characteristics of SiGe channel MOS devices with high-k/metal gate incorporated with nitrogen by plasma immersion ion implantation Fu CH, Chang-Liao KS, Du LW, Wang TK, Tsai WF, Ai CF Solid-State Electronics, 54(10), 1094, 2010 |
| 8 |
Electrical properties of Ge metal-oxide-semiconductor capacitors with La2O3 gate dielectric annealed in different ambient Xu HX, Xu JP, Li CX, Lai PT Thin Solid Films, 518(23), 6962, 2010 |
| 9 |
Growth characteristics and electrical properties of La2O3 gate oxides grown by thermal and plasma-enhanced atomic layer deposition Kim WH, Maeng WJ, Moon KJ, Myoung JM, Kim H Thin Solid Films, 519(1), 362, 2010 |
| 10 |
Effects of Ge content in SiGe channel on electrical characteristics of high-k gated MOS device Fu CH, Chang-Liao KS, Tsai KH, Wang TK, Lee YJ Solid-State Electronics, 53(8), 888, 2009 |