| 1 |
Thermodynamic design of a high temperature chemical vapor deposition process to synthesize alpha-SiC in Si-C-H and Si-C-H-Cl systems
Kang YR, Yoo CH, Nam DH, Lee MH, Seo WS, Hong S, Jeong SM
Journal of Crystal Growth, 485, 78, 2018 |
| 2 |
Design of a high temperature chemical vapor deposition reactor in which the effect of the condensation of exhaust gas in the outlet is minimized using computational modeling
Yoon JY, Kim BG, Nam DH, Yoo CH, Lee MH, Seo WS, Shul YG, Lee WJ, Jeong SM
Journal of Crystal Growth, 435, 84, 2016 |
| 3 |
Thermodynamic approach to the synthesis of silicon carbide using tetramethylsilane as the precursor at high temperature
Jeong SM, Kim KH, Yoon YJ, Lee MH, Seo WS
Journal of Crystal Growth, 357, 48, 2012 |
| 4 |
Investigation on AlN epitaxial growth and related etching phenomenon at high temperature using high temperature chemical vapor deposition process
Claudel A, Blanquet E, Chaussende D, Boichot R, Doisneau B, Berthome G, Crisci A, Mank H, Moisson C, Pique D, Pons M
Journal of Crystal Growth, 335(1), 17, 2011 |
| 5 |
Thermodynamic and experimental investigations on the growth of thick aluminum nitride layers by high temperature CVD
Claudel A, Blanquet E, Chaussende D, Audier M, Pique D, Pons M
Journal of Crystal Growth, 311(13), 3371, 2009 |
