| 1 |
Reduction of nonradiative recombination in InGaN epilayers grown with periodical dilute hydrogen carrier gas
Wang HL, Lv ZS, Chen C, Zhang SP, Guo Y, Li B, Wu ZS, Jiang H
Applied Surface Science, 494, 285, 2019 |
| 2 |
A Sub-35 pW Axon-Hillock artificial neuron circuit
Danneville F, Loyez C, Carpentier K, Sourikopoulos I, Mercier E, Cappy A
Solid-State Electronics, 153, 88, 2019 |
| 3 |
Stability of the platinum electrode during high temperature annealing
Golosov DA, Okojie JE, Zavadski SM, Rudenkov AS, Melnikov SN, Kolos VV
Thin Solid Films, 661, 53, 2018 |
| 4 |
MOCVD growth of N-polar GaN on on-axis sapphire substrate: Impact of AIN nucleation layer on GaN surface hillock density
Marini J, Leathersich J, Mahaboob I, Bulmer J, Newman N, Shahedipour-Sandvik F
Journal of Crystal Growth, 442, 25, 2016 |
| 5 |
Effect of AlN buffer layers on the surface morphology and structural properties of N-polar GaN films grown on vicinal C-face SiC substrates
Won D, Redwing JM
Journal of Crystal Growth, 377, 51, 2013 |
| 6 |
Micro-electro-mechanical radio-frequency switch fixed electrode by wet etching of AlSi-based multilayer
Tuohiniemi M
Thin Solid Films, 520(7), 3084, 2012 |
| 7 |
Effects of deposition conditions of the Al film in Al/glass specimens and annealing conditions on internal stresses and hillock formations
Kao MT, Lin JF
Thin Solid Films, 520(16), 5353, 2012 |
| 8 |
Effect of SiO2 passivation overlayers on hillock formation in Al thin films
Kim DK
Thin Solid Films, 520(21), 6571, 2012 |
| 9 |
Effects of scandium addition on electrical resistivity and formation of thermal hillocks in aluminum thin films
Lee SL, Chang JK, Cheng YC, Lee KY, Chen WC
Thin Solid Films, 519(11), 3578, 2011 |
| 10 |
Stress distribution and hillock formation in Au/Pd thin films as a function of aging treatment in capacitor applications
Nazarpour S, Jambois O, Zamani C, Afshar F, Cirera A
Applied Surface Science, 255(22), 8995, 2009 |
