화학공학소재연구정보센터
검색결과 : 3건
No. Article
1 Effect of barrier recess on transport and electrostatic interface properties of GaN-based normally-off and normally-on metal oxide semiconductor heterostructure field effect transistors
Capriotti M, Treidel EB, Fleury C, Bethge O, Ostermaier C, Rigato M, Lancaster SLC, Brunner F, Detz H, Hilt O, Wurfl J, Pogany D, Strasser G
Solid-State Electronics, 125, 118, 2016
2 Comparative study of NH4OH and HCl etching behaviours on AlGaN surfaces
Sohal R, Dudek P, Hilt O
Applied Surface Science, 256(7), 2210, 2010
3 Passivation of TiO2 by ultra-thin Al-oxide
Dittrich T, Muffler HJ, Vogel M, Gurninskaya T, Ogacho A, Belaidi A, Strub E, Bohne W, Rohrich J, Hilt O, Lux-Steiner MC
Applied Surface Science, 240(1-4), 236, 2005