검색결과 : 13건
| No. | Article |
|---|---|
| 1 |
Study of the surface cleaning of GOI and SGOI substrates for Ge epitaxial growth Moriyama Y, Hirashita N, Usuda K, Nakaharai S, Sugiyama N, Toyoda E, Takagi S Applied Surface Science, 256(3), 823, 2009 |
| 2 |
Ge wire MOSFETs fabricated by three-dimensional Ge condensation technique Irisawa T, Numata T, Hirashita N, Moriyama Y, Nakaharai S, Tezuka T, Sugiyama N, Takagi S Thin Solid Films, 517(1), 167, 2008 |
| 3 |
Characterization of anisotropic relaxation rate of SGOI (110) substrates Moriyama Y, Hirashita N, Sugiyama N, Takagi S Thin Solid Films, 517(1), 285, 2008 |
| 4 |
Planar defect formation mechanism in Ge-rich SiGe-on-insulator substrates during Ge condensation process Hirashita N, Nakaharai S, Moriyama Y, Usuda K, Tezuka T, Sugiyama N, Takagi SI Thin Solid Films, 517(1), 407, 2008 |
| 5 |
Strain relaxation processes in strained-Si layer on SiGe-on-insulator substrates Hirashita N, Sugiyama N, Toyoda E, Takagi S Thin Solid Films, 508(1-2), 112, 2006 |
| 6 |
Lattice relaxation and dislocation generation/annihilation in SiGe-on-insulator layers during Ge condensation process Tezuka T, Moriyama Y, Nakaharai S, Sugiyama N, Hirashita N, Toyoda E, Miyamura Y, Takagi S Thin Solid Films, 508(1-2), 251, 2006 |
| 7 |
Chemical states and band offsets of NH3-treated Si oxynitride films studied by high-resolution photoelectron spectroscopy Oshima M, Toyoda S, Okabayashi J, Kumigashira H, Ono K, Niwa M, Usuda K, Hirashita N Journal of Vacuum Science & Technology A, 22(1), 176, 2004 |
| 8 |
Fully depleted SOI process and device technology for digital and RF applications Ichikawa F, Nagatomo Y, Katakura Y, Itoh M, Itoh S, Matsuhashi H, Ichimori T, Hirashita N, Baba S Solid-State Electronics, 48(6), 999, 2004 |
| 9 |
Interfacial chemistry and structures of ultrathin Si oxynitride films Oshima M, Kimura K, Ono K, Horiba K, Nakamura K, Kumigashira H, Oh JH, Niwa M, Usuda K, Hirashita N Applied Surface Science, 216(1-4), 291, 2003 |
| 10 |
Study on temperature calibration of a silicon substrate in a temperature programmed desorption analysis Hirashita N, Jimbo T, Matsunaga T, Matsuura M, Morita M, Nishiyama I, Nishizuka M, Okumura H, Shimazaki A, Yabumoto N Journal of Vacuum Science & Technology A, 19(4), 1255, 2001 |