화학공학소재연구정보센터
검색결과 : 20건
No. Article
1 Role of H-2 supply for Sn incorporations in MOCVD Ge1-xSnx epitaxial growth
Suda K, Sawamoto N, Machida H, Ishikawa M, Sudoh H, Ohshita Y, Hirosawa I, Ogura A
Journal of Crystal Growth, 468, 605, 2017
2 The effect of air exposure on the crystal structure of oligo-thiophene thin films investigated using in situ X-ray diffraction
Watanabe T, Koganezawa T, Kikuchi M, Videlot-Ackermann C, Ackermann J, Brisset H, Yoshimoto N, Hirosawa I
Journal of Crystal Growth, 468, 816, 2017
3 Molecular alignments of sigma phase in co-evaporated pentacene and perfluoropentacne film on SiO2 studied by grazing-incidence X-ray diffraction
Hirosawa I, Watanabe T, Koganesawa T, Tada K, Yoshimoto N
Molecular Crystals and Liquid Crystals, 654(1), 47, 2017
4 A new instrumentation for in situ characterization of the charge transport and crystallographic properties in co-evaporated organic thin film transistor
Watanabe T, Kikuchi M, Nishida K, Koganezawa T, Hirosawa I, Yoshimoto N
Molecular Crystals and Liquid Crystals, 636(1), 168, 2016
5 Microstructures of BPDA-PPD polyimide thin films with different thicknesses
Kotera M, Samyul B, Araie K, Sugioka Y, Nishino T, Maji S, Noda M, Senoo K, Koganezawa T, Hirosawa I
Polymer, 54(9), 2435, 2013
6 Grazing incidence X-ray diffraction study on carbon nanowalls
Yoshimura H, Yamada S, Yoshimura A, Hirosawa I, Kojima K, Tachibana M
Chemical Physics Letters, 482(1-3), 125, 2009
7 Evaluation and Control of Strain in Si Induced by Patterned SiN Stressor
Ogura A, Saitoh H, Kosemura D, Kakemura Y, Yoshida T, Takei M, Koganezawa T, Hirosawa I, Kohno M, Nishita T, Nakanishi T
Electrochemical and Solid State Letters, 12(4), H117, 2009
8 Evaluation of super-critical thickness strained-Si on insulator (sc-SSOI) substrate
Ogura A, Yoshida T, Kosemura D, Kakemura Y, Takei M, Saito H, Shimura T, Koganesawa T, Hirosawa I
Solid-State Electronics, 52(12), 1845, 2008
9 A structural study of amorphous In2O3-ZnO films by grazing incidence X-ray scattering (GIXS) with synchrotron radiation
Utsuno F, Inoue H, Shimane Y, Shibuya T, Yano K, Inoue K, Hirosawa I, Sato M, Honma T
Thin Solid Films, 516(17), 5818, 2008
10 Measurement of in-plane and depth strain profiles in strained-Si substrates
Ogura A, Kosemura D, Yamasaki K, Tanaka S, Kakemura Y, Kitano A, Hirosawa I
Solid-State Electronics, 51(2), 219, 2007