| 1 |
Surface segregation of indium atoms during molecular beam epitaxy of InGaAs/GaAs superlattices on (n 1 1)A GaAs substrates
Kitada T, Shimomura S, Hiyamizu S
Journal of Crystal Growth, 301, 172, 2007 |
| 2 |
Thermal stability of Ti/Pt/Au ohmic contacts for cryogenically cooled InP-based HEMTs on (411)A-oriented substrates by MBE
Watanabe I, Shinohara K, Kitada T, Shimomura S, Endoh A, Yamashita Y, Mimura T, Hiyamizu S, Matsui T
Journal of Crystal Growth, 301, 1025, 2007 |
| 3 |
Suppression of surface segregation of silicon dopants during molecular beam epitaxy of (411)A In0.75Ga0.25As/In0.52Al0.48As pseudomorphic high electron mobility transistor structures
Sagisaka H, Kitada T, Shimomura S, Hiyamizu S, Watanabe I, Matsui T, Mimura T
Journal of Vacuum Science & Technology B, 24(6), 2668, 2006 |
| 4 |
Room temperature lasing of GaAs quantum wire vertical-cavity surface-emitting lasers grown on (775)B GaAs substrates by molecular beam epitaxy
Higuchi Y, Osaki S, Kitada T, Shimomura S, Takasuka Y, Ogura M, Hiyamizu S
Solid-State Electronics, 50(6), 1137, 2006 |
| 5 |
Effect of thermal annealing on 120-nm-T-shaped-Ti/Pt/Au-gate AlGaN/GaN high electron mobility transistors
Yamashita Y, Endoh A, Ikeda K, Hikosaka K, Mimura T, Higashiwaki M, Matsui T, Hiyamizu S
Journal of Vacuum Science & Technology B, 23(3), 895, 2005 |
| 6 |
Interface roughness characterization by electron mobility of pseudomorphic In0.74Ga0.26As/In0.52Al0.48As modulation-doped quantum wells grown on (411)A InP substrates by molecular beam epitaxy
Katoh S, Sagisaka H, Yamamoto M, Watanabe I, Kitada T, Shimomura S, Hiyamizu S
Journal of Vacuum Science & Technology B, 23(3), 1154, 2005 |
| 7 |
Much improved flat interfaces of InGaAs/AlAsSb quantum well structures grown on (411)A InP substrates by molecular-beam epitaxy
Imura M, Kurohara H, Masui Y, Asano T, Kitada T, Shimomura S, Hiyamizu S
Journal of Vacuum Science & Technology B, 23(3), 1158, 2005 |
| 8 |
120-nm-T-shaped-Mo/Pt/Au-gate AlGaN/GaN high electron mobility transistors
Yamashita Y, Endoh A, Ikeda K, Hikosaka K, Mimura T, Higashiwaki M, Matsui T, Hiyamizu S
Journal of Vacuum Science & Technology B, 23(5), L13, 2005 |
| 9 |
Pulse oscillation of self-organized In0.53Ga0.47As quantum wire lasers grown on (775)B InP substrates by molecular beam epitaxy
Hino H, Shigenobu A, Ohmori K, Kitada T, Shimomura S, Hiyamizu S
Journal of Vacuum Science & Technology B, 23(6), 2526, 2005 |
| 10 |
Polarization control of vertical cavity surface emitting laser structure by using self-organized quantum wires grown on (775)B-oriented GaAs substrate by molecular beam epitaxy
Ohno Y, Shimomura S, Hiyamizu S, Takasuka Y, Ogura M, Komori K
Journal of Vacuum Science & Technology B, 22(3), 1526, 2004 |
