검색결과 : 9건
| No. | Article |
|---|---|
| 1 |
Modeling of precursor coverage in ion-beam induced etching and verification with experiments using XeF2 on SiO2 Ebm C, Hobler G, Waid S, Wanzenboeck HD Journal of Vacuum Science & Technology B, 28(5), 946, 2010 |
| 2 |
Ion multibeam nanopatterning for photonic applications: Experiments and simulations, including study of precursor gas induced etching and deposition Ebm C, Platzgummer E, Loeschner H, Eder-Kapl S, Joechl P, Kuemmel M, Reitinger R, Hobler G, Koeck A, Hainberger R, Wellenzohn M, Letzkus F, Irmscher M Journal of Vacuum Science & Technology B, 27(6), 2668, 2009 |
| 3 |
Range evaluation in SIMS depth profiles of Er-implantations in silicon Mayerhofer K, Foisner H, Piplits K, Hobler G, Palmetshofer L, Hutter H Applied Surface Science, 252(1), 271, 2005 |
| 4 |
Method to characterize the three-dimensional distribution of focused ion beam induced damage in silicon after 50 keV Ga+ irradiation Lugstein A, Brezna W, Hobler G, Bertagnolli E Journal of Vacuum Science & Technology A, 21(5), 1644, 2003 |
| 5 |
Dose, energy, and ion species dependence of the effective plus factor for transient enhanced diffusion Hobler G, Pelaz L, Rafferty CS Journal of the Electrochemical Society, 147(9), 3494, 2000 |
| 6 |
Verification of "lateral secondary ion mass spectrometry" as a method for measuring lateral dopant dose distributions in microelectronics test structures von Criegern R, Jahnel F, Lange-Gieseler R, Pearson P, Hobler G, Simionescu A Journal of Vacuum Science & Technology B, 16(1), 386, 1998 |
| 7 |
Computer-Simulation of Oxygen Precipitation in Czochralski-Grown Silicon During HI-lo-HI Anneals Esfandyari J, Schmeiser C, Senkader S, Hobler G, Murphy B Journal of the Electrochemical Society, 143(3), 995, 1996 |
| 8 |
Verification of Models for the Simulation of Boron Implantation into Crystalline Silicon Hobler G, Simionescu A, Palmetshofer L, Jahnel F, Voncriegern R, Tian C, Stingeder G Journal of Vacuum Science & Technology B, 14(1), 272, 1996 |
| 9 |
Simulation of Phosphorus Diffusion in Silicon Using a Pair Diffusion-Model with a Reduced Number of Parameters Ghaderi K, Hobler G Journal of the Electrochemical Society, 142(5), 1654, 1995 |