검색결과 : 5건
| No. | Article |
|---|---|
| 1 |
Low-frequency noise suppression and dc characteristics enhancement in sub-mu m metamorphic p-MOSFETs with strained Si0.3Ge0.7 channel grown by MBE Myronov M, Durov S, Mironov OA, Parker EHC, Whall TE, Hackbarth T, Hock G, Herzog HJ, Konig U Applied Surface Science, 224(1-4), 265, 2004 |
| 2 |
SiGe-based FETs: buffer issues and device results Herzog HJ, Hackbarth T, Hock G, Zeuner M, Konig U Thin Solid Films, 380(1-2), 36, 2000 |
| 3 |
Alternatives to thick MBE-grown relaxed SiGe buffers Hackbarth T, Herzog HJ, Zeuner M, Hock G, Fitzgerald BA, Bulsara M, Rosenblad C, von Kanel H Thin Solid Films, 369(1-2), 148, 2000 |
| 4 |
Si/SiGe field-effect transistors Konig U, Gluck M, Hock G Journal of Vacuum Science & Technology B, 16(5), 2609, 1998 |
| 5 |
Carrier mobilities in modulation doped Si1-xGex heterostructures with respect to FET applications Hock G, Gluck M, Hackbarth T, Herzog HJ, Kohn E Thin Solid Films, 336(1-2), 141, 1998 |