화학공학소재연구정보센터
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No. Article
1 Properties of Ultrathin High Permittivity (Nb1-xTax)(2)O-5 Films Prepared by Aqueous Chemical Solution Deposition
Hardy A, Van Elshocht S, Dewulf D, Clima S, Peys N, Adelmann C, Opsomer K, Favia P, Bender H, Hoflijk I, Conard T, Franquet A, Van den Rul H, Kittl JA, De Gendt S, Van Bael MK, Mullens J
Journal of the Electrochemical Society, 157(1), G13, 2010
2 Shallow junction ion implantation in Ge and associated defect control
Satta A, Simoen E, Janssens T, Clarysse T, De Jaeger B, Benedetti A, Hoflijk I, Brijs B, Meuris M, Vandervorst W
Journal of the Electrochemical Society, 153(3), G229, 2006
3 Active dopant characterization methodology for germanium
Clarysse T, Eyben P, Janssens T, Hoflijk I, Vanhaeren D, Satta A, Meuris M, Vandervorst W, Bogdanowicz J, Raskin G
Journal of Vacuum Science & Technology B, 24(1), 381, 2006
4 P implantation doping of Ge: Diffusion, activation, and recrystallization
Satta A, Janssens T, Clarysse T, Simoen E, Meuris M, Benedetti A, Hoflijk I, De Jaeger B, Demeurisse C, Vandervorst W
Journal of Vacuum Science & Technology B, 24(1), 494, 2006
5 Study of CVD high-k gate oxides on high-mobility Ge and Ge/Si substrates
Van Elshocht S, Caymax M, Conard T, De Gendt S, Hoflijk I, Houssa M, Leys F, Bonzom R, De Jaeger B, Van Steenbergen J, Vandervorst W, Heyns M, Meuris M
Thin Solid Films, 508(1-2), 1, 2006
6 Chemical and electrical dopants profile evolution during solid phase epitaxial regrowth
Pawlak BJ, Lindsay R, Surdeanu R, Dieu B, Geenen L, Hoflijk I, Richard O, Duffy R, Clarysse T, Brijs B, Vandervorst W, Dachs CJJ
Journal of Vacuum Science & Technology B, 22(1), 297, 2004
7 Metal film characterization with qualified spreading resistance
Clarysse T, Hoflijk I, Zhang W, Maex K, Vandervorst W
Journal of Vacuum Science & Technology B, 22(1), 444, 2004