화학공학소재연구정보센터
검색결과 : 4건
No. Article
1 Dopant layer abruptness in strained Si1-xGex heterostructures
Rowell NL, Houghton DC, Berbezier I, Ronda A, Webb D, Ward M
Journal of Vacuum Science & Technology A, 22(3), 939, 2004
2 Luminescence from erbium implanted silicon-germanium quantum wells
Huda MQ, Evans-Freeman JH, Peaker AR, Houghton DC, Nejim A
Journal of Vacuum Science & Technology B, 16(6), 2928, 1998
3 Structural characterization of a UHV/CVD-grown SiGe HBT with graded base
Dion M, Houghton DC, Rowell NL, Perovic DD, Aers GC, Rolfe SJ, Sproule GI, Phillips JR
Thin Solid Films, 321(1-2), 167, 1998
4 Characterization of Si1-xGex Epilayers Grown Using a Commercially Available Ultrahigh-Vacuum Chemical-Vapor-Deposition Reactor
Lafontaine H, Houghton DC, Elliot D, Rowell NL, Baribeau JM, Laframboise S, Sproule GI, Rolfe SJ
Journal of Vacuum Science & Technology B, 14(3), 1675, 1996