화학공학소재연구정보센터
검색결과 : 3건
No. Article
1 Three-dimensional vertical Si nanowire MOS capacitor model structure for the study of electrical versus geometrical Si nanowire characteristics
Hourdakis E, Casanova A, Larrieu G, Nassiopoulou AG
Solid-State Electronics, 143, 77, 2018
2 Method for Al thin film surface nanostructuring using Al imprinting and anodic oxidation: Application to a high capacitance density metal-insulator-metal capacitor
Hourdakis E, Nassiopoulou AG
Thin Solid Films, 621, 36, 2017
3 Advanced Si-based substrates for RF passive integration: Comparison between local porous Si layer technology and trap-rich high resistivity Si
Sarafis P, Hourdakis E, Nassiopoulou AG, Neve CR, Ben Ali K, Raskin JP
Solid-State Electronics, 87, 27, 2013