| 1 |
Electrical properties correlated with redistributed deep states in a-Si:H thin-film transistors on flexible substrates undergoing mechanical bending
Lee MH, Hsieh BF, Chang ST
Thin Solid Films, 528, 82, 2013 |
| 2 |
Characterization of silicon-carbon alloy materials for future strained Si metal oxide semiconductor field effect transistors
Hsieh BF, Chang ST, Lee MH
Thin Solid Films, 529, 444, 2013 |
| 3 |
Uniaxial stress effect and hole mobility in high-Ge content strained SiGe (110) P-channel metal oxide semiconductor field effect transistors
Cheng SY, Lee MH, Chang ST, Lin CY, Chen KT, Hsieh BF
Thin Solid Films, 544, 487, 2013 |
| 4 |
A simulation study of thin film tandem solar cells with a nanoplate absorber bottom cell
Chang ST, Hsieh BF, Liu YC
Thin Solid Films, 520(8), 3369, 2012 |
| 5 |
Nickel Schottky junction on epi-Ge for strained Ge metal-oxide-semiconductor field-effect transistors source/drain engineering
Lee MH, Hsieh BF, Chang ST, Lee SW
Thin Solid Films, 520(8), 3379, 2012 |
| 6 |
Effect of layout arrangements on strained n-type metal-oxide-semiconductor field-effect transistors with silicon-carbon stressor
Lee CC, Chang ST, Hsieh BF
Thin Solid Films, 520(19), 6282, 2012 |
| 7 |
Subband structure and effective mass of relaxed and strained Ge (110) PMOSFETs
Hsieh BF, Chang ST
Solid-State Electronics, 60(1), 37, 2011 |
| 8 |
TCAD studies of novel nanoplate amorphous silicon alloy thin-film solar cells
Chang ST, Hsieh BF
Thin Solid Films, 520(5), 1612, 2011 |
| 9 |
Strain engineering of nanoscale Si MOS devices
Huang J, Chang ST, Hsieh BF, Liao MH, Wang WC, Lee CC
Thin Solid Films, 518, S241, 2010 |
| 10 |
Carrier backscattering characteristics of nanoscale strained complementary metal-oxide-semiconductor devices featuring the optimal stress engineering
Chang ST, Liao MH, Lee CC, Huang JK, Wang WC, Hsieh BF
Journal of Vacuum Science & Technology B, 27(3), 1261, 2009 |
