검색결과 : 3건
| No. | Article |
|---|---|
| 1 |
Comparison of heterostructure-emitter bipolar transistors (HEBTs) with InGaAs/GaAs superlattice and quantum-well base structures Tsai JH, Hsu IH, Li CM, Su NX, Wu YZ, Huang YS Solid-State Electronics, 52(7), 1018, 2008 |
| 2 |
Investigation of InP/InGaAs superlattice-emitter bipolar transistor with multiple negative-differential-resistance regions Tsai JH, Kang YC, Hsu IH, Weng TY Materials Chemistry and Physics, 100(2-3), 340, 2006 |
| 3 |
Investigation of InP/InGaAs pnp delta-doped heterojunction bipolar transistor with extremely low offset voltage Tsai JH, Kang YC, Hsu IH, Weng TY Solid-State Electronics, 50(3), 468, 2006 |