화학공학소재연구정보센터
검색결과 : 2건
No. Article
1 dc and low frequency noise analysis of Fowler-Nordheim stress of n-channel metal-oxide semiconductor field-effect transistors processed in a 65 nm technology
Armand J, Martinez F, Benoit P, Valenza M, Vincent E, Huard V, Rochereau K
Journal of Vacuum Science & Technology B, 27(3), 1129, 2009
2 65 nm LP/GP mix low cost platform for multi-media wireless and consumer applications
Tavel B, Duriez B, Gwoziecki R, Basso MT, Julien C, Ortolland C, Laplanche Y, Fox R, Sabouret E, Detcheverry C, Boeuf F, Morin P, Barge D, Bidaud M, Bienacel J, Garnier P, Cooper K, Chapon JD, Trouiller Y, Belledent J, Broekaart M, Gouraud P, Denais M, Huard V, Rochereau K, Difrenza R, Planes N, Marin M, Boret S, Gloria D, Vanbergue S, Abramowitz P, Vishnubhotla L, Reber D, Stolk P, Woo M, Arnaud F
Solid-State Electronics, 50(4), 573, 2006