검색결과 : 2건
| No. | Article |
|---|---|
| 1 |
All regimes mobility extraction using split C-V technique enhanced with charge-sheet model Hubert Q, Carmona M, Rebuffat B, Innocenti J, Masson P, Masoero L, Julien F, Lopez L, Chiquet P Solid-State Electronics, 111, 52, 2015 |
| 2 |
Addition of HfO2 interface layer for improved synaptic performance of phase change memory (PCM) devices Suri M, Bichler O, Hubert Q, Perniola L, Sousa V, Jahan C, Vuillaume D, Gamrat C, DeSalvo B Solid-State Electronics, 79, 227, 2013 |