검색결과 : 21건
No. | Article |
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1 |
Design principles for maximizing photovoltage in metal-oxide-protected water-splitting photoanodes Scheuermann AG, Lawrence JP, Kemp KW, Ito T, Walsh A, Chidsey CED, Hurley PK, McIntyre PC Nature Materials, 15(1), 99, 2016 |
2 |
A spectroscopic method for the evaluation of surface passivation treatments on metal-oxide-semiconductor structures Walsh LA, Hurley PK, Lin J, Cockayne E, O'Regan TP, Woicik JC, Hughes G Applied Surface Science, 301, 40, 2014 |
3 |
Investigation of electron mobility in surface-channel Al2O3/In0.53Ga0.47As MOSFETs Negara MA, Djara V, O'Regan TP, Cherkaoui K, Burke M, Gomeniuk YY, Schmidt M, O'Connor E, Povey IM, Quinn AJ, Hurley PK Solid-State Electronics, 88, 37, 2013 |
4 |
Erratum: Charged Defect Quantification in Pt/Al2O3/In0.53Ga0.47As/InP MOS Capacitors (vol 158, pg G103, 2011) Long RD, Shin B, Monaghan S, Cherkaoui K, Cagnon J, Stemmer S, McIntyre PC, Hurley PK Journal of the Electrochemical Society, 159(6), S17, 2012 |
5 |
Charged Defect Quantification in Pt/Al2O3/In0.53Ga0.47As/InP MOS Capacitors Long RD, Shin B, Monaghan S, Cherkaoui K, Cagnon J, Stemmer S, McIntyre PC, Hurley PK Journal of the Electrochemical Society, 158(5), G103, 2011 |
6 |
Low-angle misorientation dependence of the optical properties of InGaAs/InAlAs quantum wells Young RJ, Mereni LO, Petkov N, Knight GR, Dimastrodonato V, Hurley PK, Hughes G, Pelucchi E Journal of Crystal Growth, 312(9), 1546, 2010 |
7 |
Half-Cycle Atomic Layer Deposition Reaction Study Using O-3 and H2O Oxidation of Al2O3 on In0.53Ga0.47As Brennan B, Milojevic M, Kim HC, Hurley PK, Kim J, Hughes G, Wallace RM Electrochemical and Solid State Letters, 12(6), H205, 2009 |
8 |
Unpinned Interface Between Al2O3 Gate Dielectric Layer Grown by Atomic Layer Deposition and Chemically Treated n-In0.53Ga0.47As(001) Shin B, Cagnon J, Long RD, Hurley PK, Stemmer S, McIntyre PC Electrochemical and Solid State Letters, 12(8), G40, 2009 |
9 |
Gd silicate: A high-k dielectric compatible with high temperature annealing Gottlob HDB, Stefani A, Schmidt M, Lemme MC, Kurz H, Mitrovic IZ, Werner M, Davey WM, Hall S, Chalker PR, Cherkaoui K, Hurley PK, Piscator J, Engstrom O, Newcomb SB Journal of Vacuum Science & Technology B, 27(1), 249, 2009 |
10 |
Leakage current effects on C-V plots of high-k metal-oxide-semiconductor capacitors Lu Y, Hall S, Tan LZ, Mitrovic IZ, Davey WM, Raeissi B, Engstrom O, Cherkaoui K, Monaghan S, Hurley PK, Gottlob HDB, Lemme MC Journal of Vacuum Science & Technology B, 27(1), 352, 2009 |