검색결과 : 3건
| No. | Article |
|---|---|
| 1 |
Analysis of the Si(111) surface prepared in chemical vapor ambient for subsequent III-V heteroepitaxy Zhao W, Steidl M, Paszuk A, Bruckner S, Dobrich A, Supplie O, Kleinschmidt P, Hannappel T Applied Surface Science, 392, 1043, 2017 |
| 2 |
Si (001) surface preparation for the antiphase domain free heteroepitaxial growth of GaP on Si substrate Kunert B, Nemeth I, Reinhard S, Volz K, Stolz W Thin Solid Films, 517(1), 140, 2008 |
| 3 |
Heteroepitaxial technologies of III-V on Si Kawanami H Solar Energy Materials and Solar Cells, 66(1-4), 479, 2001 |