검색결과 : 24건
| No. | Article |
|---|---|
| 1 |
Growth of dislocation-free GaN islands on Si(111) using a scandium nitride buffer layer Moram MA, Kappers MJ, Joyce TB, Chalker PR, Barber ZH, Humphreys CJ Journal of Crystal Growth, 308(2), 302, 2007 |
| 2 |
Bismuth surfactant growth of the dilute nitride GaNxAs1-x Young EC, Tixier S, Tiedje T Journal of Crystal Growth, 279(3-4), 316, 2005 |
| 3 |
Strain relaxation in GaNyAs1-y films on (100)GaAs Wu X, Baribeau JM, Gupta JA, Beaulieu M Journal of Crystal Growth, 282(1-2), 18, 2005 |
| 4 |
Structural and optical quality of InGaAsN quantum wells grown on misoriented GaAs (111)b substrates by molecular beam epitaxy Miguel-Sanchez J, Hopkinson M, Gutierrez M, Navaretti P, Liu HY, Guzman A, Ulloa JM, Hierro A, Munoz E Journal of Crystal Growth, 270(1-2), 62, 2004 |
| 5 |
The incorporation behavior of arsenic and antimony in GaAsSb/GaAs grown by solid source molecular beam epitaxy Wu SD, Guo LW, Wang WX, Li ZH, Shang XZ, Hu HY, Huang Q, Zhou JM Journal of Crystal Growth, 270(3-4), 359, 2004 |
| 6 |
In0.25Ga0.75As growth on low-temperature thin buffer layers formed on GaAs (001) substrate Zhang ZC, Yang SY, Zhang FQ, Xu B, Zeng YP, Chen YH, Wang ZG Journal of Crystal Growth, 247(1-2), 126, 2003 |
| 7 |
MOVPE growth of visible vertical-cavity surface-emitting lasers (VCSELs) Zorn M, Knigge A, Zeimer U, Klein A, Kissel H, Weyers M, Trankle G Journal of Crystal Growth, 248, 186, 2003 |
| 8 |
Site control of InAs quantum dots on a patterned InP surface: As/P exchange reactions Borgstrom M, Bryllert T, Sass T, Wernersson LE, Samuelson L, Seifert W Journal of Crystal Growth, 248, 310, 2003 |
| 9 |
Selective-area growth of high-crystalline-quality InGaAlAs by metal-organic vapor-phase epitaxy Tsuchiya T, Shimizu J, Shirai M, Aoki M Journal of Crystal Growth, 248, 384, 2003 |
| 10 |
AlGaN/AlGaN UV light-emitting diodes grown on sapphire by metalorganic chemical vapor deposition Zhu TG, Chowdhury U, Denyszyn JC, Wong MM, Dupuis RD Journal of Crystal Growth, 248, 548, 2003 |