| 1 |
Wide-Bandgap III-V nitride based avalanche transit-time diode in Terahertz regime: Studies on the effects of punch through on high frequency characteristics and series resistance of the device
Mukherjee M, Roy SK
Current Applied Physics, 10(2), 646, 2010 |
| 2 |
Temperature dependence of microwave resistances of n(++)np(++) Si X band IMPATT diode
De P
Current Applied Physics, 7(3), 274, 2007 |
| 3 |
Demonstration of high-power X-band oscillation in p(+)/n(-)/n(+) 4H-SiC IMPATT diodes with guard-ring termination
Ono S, Arai M, Kimura C
Materials Science Forum, 483, 981, 2005 |
| 4 |
Giant suppression of avalanche noise in GaN double-drift impact diodes
Reklaitis A, Reggiani L
Solid-State Electronics, 49(3), 405, 2005 |
| 5 |
Computer simulation study on the noise and millimeter wave properties of InP/GaInAs heterojunction double avalanche region IMPATT diode
Mishra JK, Dash GN, Pattanaik SR, Mishra IP
Solid-State Electronics, 48(3), 401, 2004 |
| 6 |
Opportunities and technical strategies for silicon carbide device development
Cooper JA
Materials Science Forum, 389-3, 15, 2002 |
| 7 |
4H-SiC IMPATT diode fabrication and testing
Vassilevski KV, Zorenko AV, Zekentes K, Tsagaraki K, Bano E, Banc C, Lebedev AA
Materials Science Forum, 389-3, 1353, 2002 |
| 8 |
Demonstration of IMPATT diode oscillators in 4H-SiC
Yuan L, Cooper JA, Webb KJ, Melloch MR
Materials Science Forum, 389-3, 1359, 2002 |
