| 1 |
The evolution of structure and defects in the implanted Si surface: Inspecting by reflective second harmonic generation
Brahma S, Liu CW, Lo KY
Applied Surface Science, 388, 517, 2016 |
| 2 |
Infrared ellipsometry as an investigation tool of thin layers grown into plasma immersion N+ implanted silicon
Gartner M, Szekeres A, Alexandrova S, Osiceanu P, Anastasescu M, Stoica M, Marin A, Vlaikova E, Halova E
Applied Surface Science, 258(18), 7195, 2012 |
| 3 |
Combined master and Fokker-Planck equations for the modeling of the kinetics of extended defects in Si
Lampin E, Ortiz CJ, Cowern NEB, Colombeau B, Cristiano F
Solid-State Electronics, 49(7), 1168, 2005 |
| 4 |
Effects of stress on solid-phase epitaxial regrowth and corner defect generation in As+-implanted, two-dimensional amorphized Si
Shin YG, Lee JY, Park MH, Kang HK
Journal of Crystal Growth, 231(1-2), 107, 2001 |
| 5 |
Effects of stress on the microstructure of the corner defect in As+-implanted, two-dimensional amorphized Si
Shin YG, Lee JY, Park MH, Kang HK
Journal of Crystal Growth, 233(4), 673, 2001 |
| 6 |
Defect property in He+ implanted silicon probed by slow positron beam
Zhou XY, Zhang TH, Zhang XF, Weng HM, Fan YM, Du JF, Han RD
Materials Science Forum, 363-3, 475, 2001 |
| 7 |
Nanometer-scale characterization of lateral p-n(+) junction by scanning capacitance microscope
Tomiye H, Yao T
Applied Surface Science, 159, 210, 2000 |
| 8 |
Spectroscopic ellipsometry: a historical overview
Vedam K
Thin Solid Films, 313-314, 1, 1998 |
| 9 |
Source Drain Dislocations and Electrical Leakage in Titanium-Salicided CMOS Integrated-Circuits
Guldi RL
Journal of the Electrochemical Society, 141(7), 1957, 1994 |
| 10 |
Effect of Device Processing Conditions on Extended Dislocations and Defects in Ti-Salicided Source/Drain Regions of Silicon Integrated-Circuits
Guldi RL
Journal of the Electrochemical Society, 140(12), 3650, 1993 |
