| 1 |
Parameterization of the dielectric function of InxAl1-xAs alloys as a function of composition
Kim TJ, Park JC, Barange NS, Park HG, Kang YR, Nam KH, Kim YD
Current Applied Physics, 15, S30, 2015 |
| 2 |
Strain-relaxed buffer technology based on metamorphic InxAl1-xAs
Loke WK, Tan KH, Wicaksono S, Yoon SF, Wang W, Zhou Q, Yeo YC
Journal of Crystal Growth, 424, 68, 2015 |
| 3 |
Enhancement-mode L-g=50 nm metamorphic InAlAs/InGaAs HEMTs on GaAs substrates with f(max) surpassing 408 GHz
Li M, Tang CW, Li H, Lau KM
Solid-State Electronics, 99, 7, 2014 |
| 4 |
Performance and direct-coupled FET logic applications of InAlAs/InGaAs co-integrated field-effect transistors by 2-D simulation
Tsai JH, Huang CH, Ou-Yang JJ, Chao YT, Jhou JC, Wu YR
Thin Solid Films, 547, 267, 2013 |
| 5 |
Thermal analysis of short wavelength InGaAs/InAlAs quantum cascade lasers
Lee HK, Yu JS
Solid-State Electronics, 54(8), 769, 2010 |
| 6 |
Observation of new critical point in InxAl1-xAs alloy using spectroscopic ellipsometry
Yoon JJ, Ghong TH, Byun JS, Kang YJ, Kim YD, Kim HJ, Chang YC, Song JD
Applied Surface Science, 256(4), 1031, 2009 |
| 7 |
The effect of the excitation and of the temperature on the photoluminescence circular polarization of AlInAs/AlGaAs quantum dots
Sellami N, Melliti A, Sahli A, Maaref MA, Testelin C, Kuszelewiez R
Applied Surface Science, 256(5), 1409, 2009 |
| 8 |
Alloy phase separation in InAs/InAlAs/InP nanostructure superlattices studied by finite element calculation
Lei W, Ren YL, Wang YL, Li Q
Journal of Crystal Growth, 311(22), 4632, 2009 |
| 9 |
Metamorphic In0.7Al0.3As/In0.69Ga0.31As thermophotovoltaic devices grown on graded InAsyP1-y buffers by molecular beam epitaxy
Hudait MK, Brenner M, Ringel SA
Solid-State Electronics, 53(1), 102, 2009 |
| 10 |
Current transport of GaAsSb-based DHBTs with different emitter structures
Pan CT, Wang CM, Hsin YM, Zhu HJ, Kuo JM, Kao YC
Solid-State Electronics, 53(6), 574, 2009 |
