| 1 |
Interface layer control and optimization of InAs/GaSb type-II superlattices grown by molecular beam epitaxy
Xu ZC, Chen JX, Wang FF, Zhou Y, Jin C, He L
Journal of Crystal Growth, 386, 220, 2014 |
| 2 |
Modelling of MWIR HgCdTe complementary barrier HOT detector
Martyniuk P, Rogalski A
Solid-State Electronics, 80, 96, 2013 |
| 3 |
Metal organic chemical vapor deposition of metaphorphic InAs-GaSb superlattices on (001) GaAs substrates for mid-IR photodetector applications
Zhang XB, Ryou JH, Dupuis RD, Mou S, Chuang SL, Xu C, Hsieh KC
Journal of Crystal Growth, 287(2), 545, 2006 |
| 4 |
Passivation of type IIInAs/GaSb superlattice photodiodes
Gin A, Wei YJ, Bae JJ, Hood A, Nah J, Razeghi M
Thin Solid Films, 447, 489, 2004 |
| 5 |
Line-of-sight mass spectrometric study of As/Sb exchange on Sb-terminated and Ga-terminated GaSb (001) during molecular beam epitaxy
Xie QH, Van Nostrand JE
Journal of Vacuum Science & Technology A, 17(2), 342, 1999 |
| 6 |
Cross-Sectional Scanning-Tunneling-Microscopy
Yu ET
Chemical Reviews, 97(4), 1017, 1997 |
| 7 |
Atomic-Scale Structure of InAs/Inas1-xSbx Superlattices Grown by Modulated Molecular-Beam Epitaxy
Lew AY, Yu ET, Zhang YH
Journal of Vacuum Science & Technology B, 14(4), 2940, 1996 |
