검색결과 : 3건
| No. | Article |
|---|---|
| 1 |
Capping InAs quantum dots with an InGaAsSb strain-reducing layer to improve optical properties and dot-size uniformity Liu WS, Chang CM Thin Solid Films, 570, 490, 2014 |
| 2 |
DC parameter extraction of equivalent circuit model in InGaAsSb heterojunction bipolar transistors including non-ideal effects in the base region Chang YH, Cheng ZT Solid-State Electronics, 61(1), 69, 2011 |
| 3 |
Infrared free carrier response of In0.15Ga0.85As0.17Sb0.83 epilayers on GaSb Snyder PG, Tiwald TE, Thompson DW, Ianno NJ, Woollam JA, Mauk MG, Shellenbarger ZA Thin Solid Films, 313-314, 667, 1998 |