검색결과 : 11건
| No. | Article |
|---|---|
| 1 |
Stacking, polarization control, and lasing (1.55 mu m region) InAs/InGaAsP/InP (100) quantum dots Anantathanasarn S, Notzel R, van Veldhoven PJ, van Otten FWM, Eijkemans TJ, Barbarin Y, de Vries T, Smalbrugge E, Geluk EJ, Bente E, Oei YS, Smit MK, Wolter JH Journal of Crystal Growth, 298, 553, 2007 |
| 2 |
Selective etching of n-InP(100) triggered at surface dislocations induced by nanoscratching Gassilloud R, Michler J, Ballif C, Gasser P, Schmuki P Electrochimica Acta, 51(11), 2182, 2006 |
| 3 |
Pore initiation and growth on n-InP(100) Schmuki P, Schlierf U, Herrmann T, Champion G Electrochimica Acta, 48(9), 1301, 2003 |
| 4 |
Angle resolved photoemission spectroscopy of the InP(001) surface Frisch AM, Vogt P, Visbeck S, Hannappel T, Willig F, Braun W, Richter W, Bernholc J, Schmidt WG, Esser N Applied Surface Science, 166(1-4), 224, 2000 |
| 5 |
On the theory of electron transfer reactions at semiconductor electrode/liquid interfaces Gao YQ, Georgievskii Y, Marcus RA Journal of Chemical Physics, 112(7), 3358, 2000 |
| 6 |
Reflectance anisotropy spectra for the transition from the P-rich to the In-rich surface reconstruction of InP(100) Hannappel T, Visbeck S, Zorn M, Zettler JT, Willig F Journal of Crystal Growth, 221, 124, 2000 |
| 7 |
Disappearance of element-specific Kikuchi bands from fluoride surfaces Omori S, Nihei Y Journal of Vacuum Science & Technology A, 17(4), 1626, 1999 |
| 8 |
Electrical properties of ion beam sputtered and ion assisted SiO2, SiOxNy, and SiNx films on silicon Lambrinos MF, Valizadeh R, Colligon JS Journal of Vacuum Science & Technology B, 16(2), 589, 1998 |
| 9 |
Silicon Dioxide Passivation of in P/InGaAs Metal-Semiconductor-Metal Photodetectors Kollakowski S, Schade U, Bottcher EH, Kuhl D, Bimberg D, Ambree P, Wandel K Journal of Vacuum Science & Technology B, 14(3), 1712, 1996 |
| 10 |
Electrical Behavior of Epitaxial SrF2/InP(100) Diodes Mombelli B, Elfajiri A, Couturier G, Barriere AS Thin Solid Films, 256(1-2), 80, 1995 |