| 1 |
Atomic and electronic structure of epitaxial PbS on InP(110) and InP(001)
Preobrajenski AB, Chasse T
Applied Surface Science, 166(1-4), 201, 2000 |
| 2 |
Reactions of etched, single crystal (111)B-oriented InP to produce functionalized surfaces with low electrical defect densities
Sturzenegger M, Prokopuk N, Kenyon CN, Royea WJ, Lewis NS
Journal of Physical Chemistry B, 103(49), 10838, 1999 |
| 3 |
Oscillating contrast in room-temperature scanning tunneling microscope images of localized charges in III-V semiconductor cleavage surfaces
Domke C, Heinrich M, Ebert P, Urban K
Journal of Vacuum Science & Technology B, 16(5), 2825, 1998 |
| 4 |
Phase-Transition and Related Phenomena in Chemically Deposited Polycrystalline Cadmium-Sulfide Thin-Films
Lincot D, Mokili B, Froment M, Cortes R, Bernard MC, Witz C, Lafait J
Journal of Physical Chemistry B, 101(12), 2174, 1997 |
| 5 |
Semiconductor Surface Reconstruction - The Structural Chemistry of 2-Dimensional Surface-Compounds
Duke CB
Chemical Reviews, 96(4), 1237, 1996 |
| 6 |
Atomic-Resolution Imaging of InP(110) Surface Observed with Ultrahigh-Vacuum Atomic-Force Microscope in Noncontact Mode
Sugawara Y, Ohta M, Ueyama H, Morita S, Osaka F, Ohkouchi S, Suzuki M, Mishima S
Journal of Vacuum Science & Technology B, 14(2), 953, 1996 |
| 7 |
Atomically Resolved Image of Cleaved Surfaces of Compound Semiconductors Observed with an Ultrahigh-Vacuum Atomic-Force Microscope
Ohta M, Sugawara Y, Osaka F, Ohkouchi S, Suzuki M, Mishima S, Okada T, Morita S
Journal of Vacuum Science & Technology B, 13(3), 1265, 1995 |
| 8 |
Defect Motion on an InP(110) Surface Observed with Noncontact Atomic-Force Microscopy
Sugawara Y, Ohta M, Ueyama H, Morita S
Science, 270(5242), 1646, 1995 |
| 9 |
Geometrical Structure of the Bi/Gap (110) Interface - An X-Ray Standing-Wave Triangulation Study of a Nonideal System
Herreragomez A, Kendelewicz T, Woicik JC, Miyano KE, Pianetta P, Southworth S, Cowan PL, Karlin A, Spicer WE
Journal of Vacuum Science & Technology A, 12(4), 2473, 1994 |
