검색결과 : 6건
No. | Article |
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1 |
Growth of amorphous SiC film on Si by means of ion beam induced mixing Barna A, Gurban S, Kotis L, Labar J, Sulyok A, Toth AL, Menyhard M, Kovac J, Panjan P Applied Surface Science, 263, 367, 2012 |
2 |
Effects of ion damage on the surface of ITO films during plasma treatment Shin H, Kim C, Bae C, Lee JS, Lee J, Kim S Applied Surface Science, 253(22), 8928, 2007 |
3 |
Electronic effects of light ion damage in hydrogenated amorphous silicon Shannon JM, Chua CH Solid-State Electronics, 47(11), 1903, 2003 |
4 |
Electrical and optical characteristics of etch induced damage in InGaAs Berg EW, Pang SW Journal of Vacuum Science & Technology B, 16(6), 3359, 1998 |
5 |
Temperature-Dependent Electron-Cyclotron-Resonance Etching of InP, Gap, and GaAs Shul RJ, Howard AJ, Vartuli CB, Barnes PA, Seng W Journal of Vacuum Science & Technology A, 14(3), 1102, 1996 |
6 |
Influence of in-Situ Argon Cleaning of GaAs on Schottky Diodes and Metal-Semiconductor Field-Effect Transistors Vanhassel JG, Heyker HC, Kwaspen JJ Journal of Vacuum Science & Technology B, 13(6), 2245, 1995 |