화학공학소재연구정보센터
검색결과 : 6건
No. Article
1 Growth of amorphous SiC film on Si by means of ion beam induced mixing
Barna A, Gurban S, Kotis L, Labar J, Sulyok A, Toth AL, Menyhard M, Kovac J, Panjan P
Applied Surface Science, 263, 367, 2012
2 Effects of ion damage on the surface of ITO films during plasma treatment
Shin H, Kim C, Bae C, Lee JS, Lee J, Kim S
Applied Surface Science, 253(22), 8928, 2007
3 Electronic effects of light ion damage in hydrogenated amorphous silicon
Shannon JM, Chua CH
Solid-State Electronics, 47(11), 1903, 2003
4 Electrical and optical characteristics of etch induced damage in InGaAs
Berg EW, Pang SW
Journal of Vacuum Science & Technology B, 16(6), 3359, 1998
5 Temperature-Dependent Electron-Cyclotron-Resonance Etching of InP, Gap, and GaAs
Shul RJ, Howard AJ, Vartuli CB, Barnes PA, Seng W
Journal of Vacuum Science & Technology A, 14(3), 1102, 1996
6 Influence of in-Situ Argon Cleaning of GaAs on Schottky Diodes and Metal-Semiconductor Field-Effect Transistors
Vanhassel JG, Heyker HC, Kwaspen JJ
Journal of Vacuum Science & Technology B, 13(6), 2245, 1995