화학공학소재연구정보센터
검색결과 : 2건
No. Article
1 Depth profile analysis of helium in silicon with high-resolution elastic recoil detection analysis
Tomita M, Akutsu H, Oshima Y, Sato N, Mure S, Fukuyama H, Ichihara C
Journal of Vacuum Science & Technology B, 28(3), 554, 2010
2 High-resolution Rutherford backscattering spectrometry study on process dependent elemental depth profile change of hafnium silicate on silicon
Ichihara C, Yasuno S, Takeuchi H, Kobayashi A, Mure S, Fujikawa K, Sasakawa K
Journal of Vacuum Science & Technology A, 27(4), 937, 2009