화학공학소재연구정보센터
검색결과 : 32건
No. Article
1 Quasi-one-dimensional In atomic chains on Si(111) at low temperature studied by reflection high-energy positron diffraction and scanning tunneling microscopy
Hashimoto M, Fukaya Y, Kawasuso A, Ichimiya A
Applied Surface Science, 254(23), 7733, 2008
2 Surface structure and phase transition of Ge(111)-3x3-Pb studied by reflection high-energy positron diffraction
Fukaya Y, Hashimoto M, Kawasuso A, Ichimiya A
Applied Surface Science, 254(23), 7827, 2008
3 Surface morphology of the Si(111) surface induced by Co-deposition of Si and CH4
Suryana R, Ichimiya A, Nakahara H, Saito Y
Journal of Crystal Growth, 301, 349, 2007
4 Crystallization process of high-k gate dielectrics studied by surface X-ray diffraction
Terasawa N, Akimoto K, Mizuno Y, Ichimiya A, Sumitani K, Takahashi T, Zhang XW, Sugiyama H, Kawata H, Nabatame T, Toriumi A
Applied Surface Science, 244(1-4), 16, 2005
5 Strain relaxation near high-k/Si interface by post-deposition annealing
Emoto T, Akimoto K, Yoshida Y, Ichimiya A, Nabatame T, Toriumi A
Applied Surface Science, 244(1-4), 55, 2005
6 Reflection high-energy positron diffraction study of a Si(001) surface
Hayashi K, Fukaya Y, Kawasuso A, Ichimiya A
Applied Surface Science, 244(1-4), 145, 2005
7 Positron diffraction study of SiC(0001) surface
Kawasuso A, Maekawa M, Yoshikawa M, Ichimiya A
Applied Surface Science, 244(1-4), 149, 2005
8 Observation of Si(111)-root 3 x root 3-Ag surface at room temperature by reflection high-energy positron diffraction
Fukaya Y, Kawasuso A, Hayashi K, Ichimiya A
Applied Surface Science, 244(1-4), 166, 2005
9 Ag/Si(111)root 3 x root 3 surface phase transition at low temperature studied by RHEED
Nakahara H, Suzuki T, Ichimiya A
Applied Surface Science, 234(1-4), 292, 2004
10 Precise determination of surface Debye-temperature of Si(111)-7 x 7 surface by reflection high-energy positron diffraction
Fukaya Y, Kawasuso A, Hayashi K, Ichimiya A
Applied Surface Science, 237(1-4), 29, 2004