검색결과 : 32건
No. | Article |
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1 |
Quasi-one-dimensional In atomic chains on Si(111) at low temperature studied by reflection high-energy positron diffraction and scanning tunneling microscopy Hashimoto M, Fukaya Y, Kawasuso A, Ichimiya A Applied Surface Science, 254(23), 7733, 2008 |
2 |
Surface structure and phase transition of Ge(111)-3x3-Pb studied by reflection high-energy positron diffraction Fukaya Y, Hashimoto M, Kawasuso A, Ichimiya A Applied Surface Science, 254(23), 7827, 2008 |
3 |
Surface morphology of the Si(111) surface induced by Co-deposition of Si and CH4 Suryana R, Ichimiya A, Nakahara H, Saito Y Journal of Crystal Growth, 301, 349, 2007 |
4 |
Crystallization process of high-k gate dielectrics studied by surface X-ray diffraction Terasawa N, Akimoto K, Mizuno Y, Ichimiya A, Sumitani K, Takahashi T, Zhang XW, Sugiyama H, Kawata H, Nabatame T, Toriumi A Applied Surface Science, 244(1-4), 16, 2005 |
5 |
Strain relaxation near high-k/Si interface by post-deposition annealing Emoto T, Akimoto K, Yoshida Y, Ichimiya A, Nabatame T, Toriumi A Applied Surface Science, 244(1-4), 55, 2005 |
6 |
Reflection high-energy positron diffraction study of a Si(001) surface Hayashi K, Fukaya Y, Kawasuso A, Ichimiya A Applied Surface Science, 244(1-4), 145, 2005 |
7 |
Positron diffraction study of SiC(0001) surface Kawasuso A, Maekawa M, Yoshikawa M, Ichimiya A Applied Surface Science, 244(1-4), 149, 2005 |
8 |
Observation of Si(111)-root 3 x root 3-Ag surface at room temperature by reflection high-energy positron diffraction Fukaya Y, Kawasuso A, Hayashi K, Ichimiya A Applied Surface Science, 244(1-4), 166, 2005 |
9 |
Ag/Si(111)root 3 x root 3 surface phase transition at low temperature studied by RHEED Nakahara H, Suzuki T, Ichimiya A Applied Surface Science, 234(1-4), 292, 2004 |
10 |
Precise determination of surface Debye-temperature of Si(111)-7 x 7 surface by reflection high-energy positron diffraction Fukaya Y, Kawasuso A, Hayashi K, Ichimiya A Applied Surface Science, 237(1-4), 29, 2004 |