| 1 |
Investigation of p-type nanocrystalline silicon oxide thin film prepared at various growth temperatures
Kim S, Iftiquar SM, Shin C, Park J, Yi J
Materials Chemistry and Physics, 229, 392, 2019 |
| 2 |
Improvement in performance of tandem solar cell by applying buffer layer, back reflector and higher crystallinity of the microcrystalline Si active layer of bottom subcell
Cho J, Iftiquar SM, Pham DP, Jung J, Park J, Ahn S, Le AHT, Kim JS, Yi J
Thin Solid Films, 639, 56, 2017 |
| 3 |
Radio frequency plasma deposited boron doped high conductivity p-type nano crystalline silicon oxide thin film for solar cell window layer
Shin C, Iftiquar SM, Park J, Ahn S, Kim S, Jung J, Bong S, Yi J
Materials Chemistry and Physics, 159, 64, 2015 |
| 4 |
Light management for enhanced efficiency of textured n-i-p type amorphous silicon solar cell
Iftiquar SM, Jung J, Shin C, Park H, Park J, Jung J, Yi J
Solar Energy Materials and Solar Cells, 132, 348, 2015 |
| 5 |
Interfacial barrier height modification of indium tin oxide/a-Si:H(p) via control of density of interstitial oxygen for silicon heterojunction solar cell application
Ahn S, Kim S, Dao VA, Lee S, Iftiquar SM, Kim D, Hussain SQ, Park H, Lee J, Lee Y, Cho J, Kim S, Yi J
Thin Solid Films, 546, 342, 2013 |
| 6 |
Optimization of intrinsic hydrogenated amorphous silicon deposited by very high-frequency plasma-enhanced chemical vapor deposition using the relationship between Urbach energy and silane depletion fraction for solar cell application
Shin C, Iftiquar SM, Park J, Kim Y, Baek S, Jang J, Kim M, Jung J, Lee Y, Kim S, Yi J
Thin Solid Films, 547, 256, 2013 |
| 7 |
Effect of ultraviolet light exposure to boron doped hydrogenated amorphous silicon oxide thin film
Baek S, Iftiquar SM, Jang J, Lee S, Kim M, Jung J, Park H, Park J, Kim Y, Shin C, Lee YJ, Yi J
Applied Surface Science, 260, 17, 2012 |
| 8 |
Improvement in the optoelectronic properties of a-SiO : H films
Das D, Iftiquar SM, Das D, Barua AK
Journal of Materials Science, 34(5), 1051, 1999 |
| 9 |
Control of the properties of wide bandgap a-SiC : H films prepared by RF PECVD method by varying methane flow rate
Iftiquar SM, Barua AK
Solar Energy Materials and Solar Cells, 56(2), 117, 1999 |
