검색결과 : 3건
| No. | Article |
|---|---|
| 1 |
Proton channeling into the Si substrate at the bottom of ultrahigh-aspect-ratio contact holes during plasma etching Ichimori T, Ikegami N, Hirashita N, Kanamori J Thin Solid Films, 374(2), 228, 2000 |
| 2 |
Study on characterizing fluorocarbon polymer films deposited on an inner surface during high-aspect-ratio contact hole etching using secondary ion mass spectroscopy Liu GL, Ikegami N, Uchida H, Hirashita N, Kanamori J Journal of Vacuum Science & Technology B, 17(2), 355, 1999 |
| 3 |
Residence time effects on SiO2/Si selective etching employing high density fluorocarbon plasma Chinzei Y, Ichiki T, Ikegami N, Feurprier Y, Shindo H, Horiike Y Journal of Vacuum Science & Technology B, 16(3), 1043, 1998 |