화학공학소재연구정보센터
검색결과 : 7건
No. Article
1 Stress control in GaN/sapphire templates for the fabrication of crack-free thick layers
Napierala J, Martin D, Grandjean N, Ilegems M
Journal of Crystal Growth, 289(2), 445, 2006
2 Selective GaN epitaxy on Si(111) substrates using porous aluminum oxide buffer layers
Napierala J, Buhlmann HJ, Ilegems M
Journal of the Electrochemical Society, 153(2), G125, 2006
3 Surface chemistry and transport effects in GaN hydride vapor phase epitaxy
Segal AS, Kondratyev AV, Karpov SY, Martin D, Wagner V, Ilegems M
Journal of Crystal Growth, 270(3-4), 384, 2004
4 GaN laterally overgrown on sapphire by low pressure hydride vapor phase epitaxy
Napierala J, Martin D, Buhlmann HJ, Gradecak S, Ilegems M
Materials Science Forum, 457-460, 1581, 2004
5 Surface characterization of a biochip prototype for cell-based biosensor applications
Makohliso SA, Leonard D, Giovangrandi L, Mathieu HJ, Ilegems M, Aebischer P
Langmuir, 15(8), 2940, 1999
6 Surface characterization of a biochip prototype for cell-based biosensor applications (vol 15, pg 2940, 1999)
Makohliso SA, Leonard D, Giovangrandi L, Mathieu HJ, Ilegems M, Aebischer P
Langmuir, 15(24), 8552, 1999
7 Fabrication and photoluminescence investigation of silicon nanowires on silicon-on-insulator material
Gotza M, Dutoit M, Ilegems M
Journal of Vacuum Science & Technology B, 16(2), 582, 1998