검색결과 : 18건
| No. | Article |
|---|---|
| 1 |
Enhancement of lateral growth of the GaN crystal with extremely low dislocation density during the Na-flux growth on a point seed Hayashi M, Imanishi M, Yamada T, Matsuo D, Murakami K, Maruyama M, Imade M, Yoshimura M, Mori Y Journal of Crystal Growth, 468, 827, 2017 |
| 2 |
Vacancy-type defects in bulk GaN grown by the Na-flux method probed using positron annihilation Uedono A, Imanishi M, Imade M, Yoshimura M, Ishibashi S, Sumiya M, Mori Y Journal of Crystal Growth, 475, 261, 2017 |
| 3 |
Dramatic reduction of dislocations on a GaN point seed crystal by coalescence of bunched steps during Na-flux growth Imanishi M, Todoroki Y, Murakami K, Matsuo D, Imabayashi H, Takazawa H, Maruyama M, Imade M, Yoshimura M, Mori Y Journal of Crystal Growth, 427, 87, 2015 |
| 4 |
Free electron concentration dependent sub-bandgap optical absorption characterization of bulk GaN crystals Pimputkar S, Suihkonen S, Imade M, Mori Y, Speck JS, Nakamura S Journal of Crystal Growth, 432, 49, 2015 |
| 5 |
Effect of H-2 carrier gas on the physical properties of a GaN layer grown using Ga2O vapor and NH3 Bu Y, Imade M, Kitamoto A, Yoshimura M, Isemura M, Mori Y Journal of Crystal Growth, 392, 1, 2014 |
| 6 |
Vapor-liquid-solid growth of thick 2H-SiC layers under CH4 continuous flow Nakagawa Y, Takeuchi S, Ishikawa A, Imade M, Yoshimura M, Mori Y Journal of Crystal Growth, 371, 23, 2013 |
| 7 |
The effects of surface treatments of the substrates on high-quality GaN crystal growth Fujimori T, Maruyama M, Honjo M, Takazawa H, Murakami K, Imabayashi H, Todoroki Y, Matsuo D, Imade M, Yoshimura M, Mori Y Journal of Crystal Growth, 372, 73, 2013 |
| 8 |
Vapor-phase epitaxial growth of GaN films using Ga2O vapor and NH3 Imade M, Bu Y, Sumi T, Kitamoto A, Yoshimura M, Sasaki T, Imsemura M, Mori Y Journal of Crystal Growth, 350(1), 56, 2012 |
| 9 |
Growth of bulk GaN crystal by Na flux method under various conditions Mori Y, Imade M, Murakami K, Takazawa H, Imabayashi H, Todoroki Y, Kitamoto K, Maruyama M, Yoshimura M, Kitaoka Y, Sasaki T Journal of Crystal Growth, 350(1), 72, 2012 |
| 10 |
MOVPE growth of nonpolar a-plane GaN with low oxygen contamination and specular surface on a freestanding GaN substrate Isobe Y, Ikki H, Sakakibara T, Iwaya M, Takeuchi T, Kamiyama S, Akasaki I, Sugiyama T, Amano H, Imade M, Mori Y Journal of Crystal Growth, 351(1), 126, 2012 |