검색결과 : 9건
| No. | Article |
|---|---|
| 1 |
Fabrication and characterization of sub-micron In0.53Ga0.47As p-i-n diodes Gaur A, Filmer M, Thomas P, Bhatnagar K, Droopad R, Rommel S Solid-State Electronics, 111, 234, 2015 |
| 2 |
Theoretical study on electronic and optical properties of In0.53Ga0.47As (100) beta 2 (2 x 4) surface Guo J, Chang BK, Jin MC, Yang MZ, Wang HG, Wang MS, Huang JC, Zhou L, Zhang YJ Applied Surface Science, 288, 238, 2014 |
| 3 |
Phosphorous passivation of In0.53Ga0.47As using MOVPE and characterization of Au-Ga2O3 (Gd2O3)-In0.53Ga0.47As MIS capacitor Pal S, Shivaprasad SM, Aparna Y, Chakraborty BR Applied Surface Science, 245(1-4), 196, 2005 |
| 4 |
The structural and photoluminescence properties of self-organized quantum dots in InAs/In0.53Ga0.47As multilayer on InP substrate Sun ZZ, Wu J, Lin F, Liu FQ, Chen YH, Ye XL, Jiang WH, Li YF, Xu B, Wang ZG Journal of Crystal Growth, 212(1-2), 360, 2000 |
| 5 |
Temperature independent current blocking due to hot electrons in InAlAs/InGaAs double heterojunction bipolar transistors with composite collectors McKinnon WR, Driad R, McAlister SP, Renaud A, Wasilewski ZR Journal of Vacuum Science & Technology A, 16(2), 846, 1998 |
| 6 |
A Fundamental-Study on N-In0.53Ga0.47As and P-In0.53Ga0.47As in H2O2 Solution - Electrochemical-Behavior and Selective Etching vs InP Theuwis A, Gomes WP Journal of the Electrochemical Society, 144(4), 1390, 1997 |
| 7 |
Schottky-Barrier Height Enhancement on N-In0.53Ga0.47As by (NH4)(2)S-X Surface-Treatment Ali ST, Kumar A, Bose DN Journal of Materials Science, 30(19), 5031, 1995 |
| 8 |
Area-Selective Diffusion of Zn in InP/In0.53Ga0.47As/InP for Lateral PN Photodiodes Klockenbrink R, Peiner E, Wehmann HH, Schlachetzki A Journal of the Electrochemical Society, 142(3), 985, 1995 |
| 9 |
Extremely Low-Resistance Au/Mn/Ni/Au Ohmic Contact to P-GaAs Thiery JF, Fawaz H, Leroy A, Salmer G Journal of Vacuum Science & Technology B, 13(5), 2130, 1995 |