화학공학소재연구정보센터
검색결과 : 5건
No. Article
1 Performance and direct-coupled FET logic applications of InAlAs/InGaAs co-integrated field-effect transistors by 2-D simulation
Tsai JH, Huang CH, Ou-Yang JJ, Chao YT, Jhou JC, Wu YR
Thin Solid Films, 547, 267, 2013
2 InAlAs/InGaAs doped channel heterostructure for high-linearity, high-temperature and high-breakdown operations
Chen YJ, Hsu WC, Chen YW, Lin YS, Hsu RT, Wu YH
Solid-State Electronics, 49(2), 163, 2005
3 Characteristics of In0.52Al0.48As/InxGa1-xAs HEMT's with various InxGa1-xAs channels
Chen YW, Hsu WC, Hsu RT, Wu YH, Chen YJ
Solid-State Electronics, 48(1), 119, 2004
4 A new simplified analytical short-channel threshold voltage model for InAlAs/InGaAs heterostructure InP based pulsed doped HEMT
Gupta R, Gupta M, Gupta RS
Solid-State Electronics, 48(3), 437, 2004
5 A new depletion dependent analytical model for sheet carrier density of InAlAs/InGaAs heterostructure, InP based HEMT
Gupta R, Gupta M, Gupta RS
Solid-State Electronics, 47(1), 33, 2003